ReSCIM: Variation-Resilient High Weight-Loading Bandwidth In-Memory Computation Based on Fine-Grained Hybrid Integration of Multi-Level ReRAM and SRAM Cells
Published in ICCAD, 2024
Recommended citation: Xiaomeng Wang, Jingyu He, Kunming Shao, Jiakun Zheng, Fengshi Tian, Tim Kwang-Ting Cheng, and Chi-Ying Tsui. ReSCIM: Variation-Resilient High Weight-Loading Bandwidth In-Memory Computation Based on Fine-Grained Hybrid Integration of Multi-Level ReRAM and SRAM Cells. In Proceedings of the 43rd IEEE/ACM International Conference on Computer-Aided Design (ICCAD), pages 1-9. ACM, 2024. https://doi.org/10.1145/3676536.3676751
ReSCIM: Variation-Resilient High Weight-Loading Bandwidth In-Memory Computation Based on Fine-Grained Hybrid Integration of Multi-Level ReRAM and SRAM Cells
